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In this paper, a magnetooptic chip was prepared on Si wafer by combi-natorial Ga+ implantation into ion sputtered Co7Ag93 film.The surface morphology of each unit of the chip was detected by AFM, while their Kerr effect was measured by MOKE equipment. It is observed that the maximum Kerr rotation (MKR) occurs when the incident photon energy is around 3.8-3.9 eV. Summarization of MKR ver-sus implanted Ga+ dose shows that the MKR enhancement by Ga+ implantation can be characterized as incubation, enhancement and saturation regions. Considering the mutual solubility and surface morphology transition after annealing, it is suggested that Ga+ tends to form CoGa and/or CoGa3 intermetallic compounds.Before the formation of CoGa3 compounds, no apparent MKR enhancement could be observed. While when the surface is half occupied by forest-like CoGa3 compounds, MKR en-hancement will be saturated. By comparison of the maximum Kerr rotation with the cone areal density, it can be induced that not only the bulk concentr
In this paper, a magnetooptic chip was prepared on Si wafer by combi-natorial Ga + implantation into ion sputtered Co7Ag93 film. This surface morphology of each unit of the chip was detected by AFM, while their Kerr effect was measured by MOKE equipment. It is observed that the maximum Kerr rotation (MKR) occurs when the incident photon energy is around 3.8-3.9 eV. Summarization of MKR ver-sus implanted Ga + dose shows that the MKR enhancement by Ga + implantation can be characterized as incubation, enhancement and saturation regions. Considering the mutual solubility and surface morphology transition after annealing, it is suggested that Ga + tends to form CoGa and / or CoGa3 intermetallic compounds. Before the formation of CoGa3 compounds, no apparent MKR enhancement could be observed. forest-like CoGa3 compounds, MKR en-hancement will be saturated. By comparison of the maximum Kerr rotation with the cone areal density, it can be induced that not on onl y the bulk concentr