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近代雷达技术对微波本振源提出了更高的要求,既要求在较宽的频率范围内进行快速电调谐,又要求在频带内有较高的频率稳定度,而且对相位噪声要求更为苛刻。 GaAs FET器件优越的高频性能,使它在X波段以至更高频段内作为振荡器的有源元件具有非常强的竞争力;但由于它的相位噪声较高,限制了它在低噪声系统中的应用。国处报道的微带型GaAs FET振荡器的相位噪声,在偏离载频10kHz时,典型值为-65dBC/Hz。南京电子器件研究所利用本所研制的GaAs FET和变容二极管制作的微带型FET VCO,在线性电调范围
In recent years, radar technology put forward higher requirements for microwave local oscillator, which not only requires fast electrical tuning over a wide frequency range, but also requires higher frequency stability in the frequency band and more stringent phase noise requirements . The superior high frequency performance of GaAs FET devices makes them very competitive with active elements as oscillators in the X-band and beyond; however, their high phase noise limits their use in low-noise systems Applications. The phase noise of a microstrip-type GaAs FET oscillator reported in the country has a typical value of -65dBC / Hz at 10kHz deviation from the carrier frequency. Nanjing Institute of Electronic Devices developed by our GaAs FET and varactor diodes produced VCO microstrip FET in the linear range