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报道调制掺杂AlGaAs/InGaAs/GaAs应变量子阱结构的分子束外延生长、变温霍尔效应和电化学c—v测量,并对输运性质进行了讨论。用这种材料研制的PM-HEMT(pseudomorphic high electron mobility transistors)器件,栅长0.4μm,在12GHz下噪声系数1.03dB,相关增益7.5dB。
The molecular beam epitaxy, temperature swinging Hall effect and electrochemical c-v measurements of the doped AlGaAs / InGaAs / GaAs strained quantum well structures are reported. The transport properties are also discussed. The PM-HEMT (pseudomorphic high electron mobility transistors) device developed by this kind of material has a gate length of 0.4μm, a noise figure of 1.03dB at 12GHz and a correlation gain of 7.5dB.