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在绝缘层上生长硅材料的 SOI(Silicon on Insulator)技术对于制作高密度的 MOS 电路与新型的三维集成电路有重要的应用前景,近几年已引起了国际上许多国家的密切注意。这种 SOI 新材料可以利用激光束、电子束以及石墨条加热器等对绝缘层上多晶硅进行区域熔化再结晶获得。本文报告了利用调 Q 的 Nd∶YAG 激光与连续 Ar~+激光,对 SiO_2绝缘层上以低压化学汽相淀积(LPCVD)得到的多晶硅薄膜进行激光再结晶的研究结果。透射电镜(TEM)
The silicon on insulator (SOI) technology for growing silicon on insulating layer has important application prospects for making high-density MOS circuits and new three-dimensional integrated circuits. In recent years, many countries in the world have drawn close attention. This new SOI material can be obtained by laser melting, electron beam, and graphite strip heater melting and recrystallizing polycrystalline silicon on the insulating layer. In this paper, the results of laser recrystallization of polycrystalline silicon thin films deposited on low-pressure chemical vapor deposition (LPCVD) on SiO 2 insulating layer by Q-switched Nd:YAG laser and continuous Ar + laser are reported. Transmission electron microscopy (TEM)