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With method of Van Derberg,this paper gives the electron mobilities at different temperature in In0.53Ga0 .47As on InP by LPE, and analyses them from scatters of polaried optical phonons, ioned impurities and alloy. The results of the experiment and theory show that the scatter of ioned impurities and alloy scatter play an importment role at low temperature and the scatter of polaried optical phonon is superior at high temperature. It is also indicated that the alloy scatter is very, active for the ternary alloy density of about 1×1018cm-3. At last, we choose the optimal alloy potential △U= 0.83eV and give the limitation of Matthiessen rule.
With method of Van Derberg, this paper gives the electron mobilities at different temperature in In 0.53 Ga 0.47 As on InP by LPE, and analyses them from scatters of polaried optical phonons, ionized impurities and alloy. The results of the experiment and theory show that the scatter of ioned impurities and alloy scatter play an importment role at low temperature and the scatter of polaried optical phonon is superior at high temperature. It is also indicated that the alloy scatter is very, active for the ternary alloy density of about 1 × 10 18 cm -3. At last, we choose the optimal alloy potential ΔU = 0.83 eV and give the limitation of Matthiessen rule.