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本文用透射电子显微镜研究了经氩离子束磨削过的Cd_(0.2)Hg_(0.8)Te的缺陷结构。当磨削束流密度为600μAcm~(-2)时,会产生高密度的小位错坑。这些位错坑具有巴尔格矢量为1/2 o〈110〉的棱边取向和具有填隙性质。这些位错位于磨削表面下大约50nm的窄带内,比氩离子射程大一个数量级。于是认为以级联形式出现的填隙就从较热表面区域扩散到样品体内。由于该材料中的快速扩散,填隙浓度梯度很小,于是在较冷的深层区域的过饱和填隙要超过该表面的填隙,因而这个深度利于成核。也观察到了在室温下储藏一时期后,这些位错坑有收缩现象,表明了在这种材料中的快速扩散。
In this paper, the defect structure of Cd_ (0.2) Hg_ (0.8) Te by argon ion beam grinding was studied by transmission electron microscope. When the beam current density is 600μAcm -2, a high density of small dislocation pits will be produced. These dislocation pits have edge orientation with Barr vectors of ½ o <110> and have interstitial properties. These dislocations lie within a narrow band of about 50 nm below the grinding surface, one order of magnitude larger than the argon ion range. It is therefore believed that the interstitial interstitial forms diffuse from the hotter surface area into the sample body. Due to the rapid diffusion in the material, the interstitial concentration gradient is so small that the supersaturated interstitial fill in the colder deep zone exceeds the interstitial fill in the surface, thus favoring nucleation. It has also been observed that after a period of storage at room temperature, these dislocation pits have constricted, indicating a rapid diffusion in this material.