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  5. The Etch Rate of Silicon Dioxide Single Crystals Treated by Low Pressure Direct Current Plasma

The Etch Rate of Silicon Dioxide Single Crystals Treated by Low Pressure Direct Current Plasma

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：zuaixin2
【摘 要】
：
Low-k materials as SiO2 play important role in semiconductor industry and the plasma is one of the mostly used tools for advanced materials processing.
【作 者】
：
D. M. Popovic V. Milosavljevi(c) A. Zekic N. Romcevic 
【机 构】
：
Sungkyunkwan University, Republic of Korea; University of Belgrade, Faculty of Physics, Serbia
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
Low-k Materials Plasma Discharge Raman scattering Etch Rate Sensors 
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Low-k materials as SiO2 play important role in semiconductor industry and the plasma is one of the mostly used tools for advanced materials processing.
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