【摘 要】
：
P-type Bi0.5Sb1.5Te3 thermoelectric crystals with various percentage of Te (x=0.00-3.00 wt.%) were prepared by gradient freeze method.By doping Te content d
【机 构】
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Chengdu Vocational & Technical College, Chengdu, China, 610041
【出 处】
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2011中国功能材料科技与产业高层论坛
论文部分内容阅读
P-type Bi0.5Sb1.5Te3 thermoelectric crystals with various percentage of Te (x=0.00-3.00 wt.%) were prepared by gradient freeze method.By doping Te content differently and fabrication processes,the antisite defects and carrier concentration (hole) were controlled.The Seebeck coefficient,resistivity,thermal conductivity,carrier concentration and mobility were measured.Base on this measurement,the relationships between carrier concentration and thermoelectric properties were investigated in detail.This result suggested that Bi0.5Sb1.5Te3 crystals with excess 0.09 wt.% Te shows thermoelectric figure of merit ZT=1.36 at room temperature,corresponding carrier concentration and mobility are 1.25× 1019/cm3 and 1480 cm2/Vs respectively.
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