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Two dimensional nanomaterials such as graphene and layered inorganic materials are promising for future nanoscale electronics and optics.Unlike doped graphene films which are prepared by high temperature CVD,we report a low-temperature method toward synthesis of large area heavily heteroatom doped graphene on copper foils via a free radical reaction using polyhalogenated aromatic compounds.This low temperature method allows the synthesis of single layer NG film with high nitrogen content,and the production of large area SG film for the first time.Both doped graphenes show enhanced electrical properties in field effect transistors as well as high performance electrocatalyst for fuel cells.The first GaS nanosheet-based photodetectors are demonstrated on both mechanically rigid and flexible substrates.Photocurrent measurements of GaS nanosheet photodetectors made on SiO2/Si substrates and flexible polyethylene terephthalate(PET)substrates exhibit a photo-responsivity at 254nm up to 4.2 AW-1 and 19.2 AW-1,respectively,which exceeds that of graphene,MoS2,or other 2D materials-based devices.Additionally,the linear dynamic range of the devices on SiO2/Si and PET substrates are 97.7dB and 78.73 Db,respectively.Both surpass that of currently-exploited InGaAs photodetectors(66 Db).Further,we have also performed work in GaSe based photodetector have for the first time.GaSe based photodetector showing a fast response of 0.02s,high responsivity of 2.8 AW-1 and high external quantum efficiency of 1367%at 254 nm,which indicates that the two dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.