Nitride light-emitting diodes (LEDs) have so far fabricated mostly based on planar InGaN/GaN multiple quantum wells (MQWs) have shown very promising performance.However,many drawbacks are blocking the further development of such conventional planar structure,for instance,the presence of high dislocation density,large spontaneous/piezoelectric polarization limits the improvement of internal quantum efficiency; Meanwhile,the high refractive index of nitride materials makes most of the light emitted from the active region get trapped in the LED chips.Lots of efforts have been made to address these issues.Recently,low dimensional nanostructures,such as quantum dots (QDs) or nanowire structures,have been considered as a promising candidate to improve the performances of nitride based semiconductors optoelectronic devices due to their unique advantages of defect-free structure,quantum confinement,reduced piezoelectric field and etc.What’s more,these nanostructures can effectively improve the light extraction efficiency because of the large are-to-volume ratio and special geometrical structures.In this work,a special designed multiple layer InGaN QDs was prepared by commercial MOCVD system.The structure characteristics of InGaN QDs have been performed.In addition,the recombination mechanism of bimodal distributed InGaN QDs both theoretically and experimentally.Furthermore,the selective area growth methods have been used to growth a unique pyramid array InGaN/GaN core-shell LED structures.Our results indicate that low dimensional structures will be a promising solution to further improve the performance of nitride light-emitting diodes.What’s more,they also have some potential application to realize whole white light emission in a single unit.