Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost,flexibility and chemical diversity.In previous studies,the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes,generating magnetoresistance.Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer.