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In this paper we present a new behavioral description Verilog-A equivalent model of a nanostructure photodetector.The equivalent model was based on the relation between the voltage,light power and current (In=fn(V,P)),the voltage,light power and capacitance(Cn=fn(V,P)) of the kind of novel nanostructure photodetector.The model can be easily integrated with the CMOS readout circuits(ROIC) for circuit design.The I-V and C-V characteristics of the photodetector with quantum dots-in well hybrid structure are presented.According to the camparison between the simulation result and the experimental measurement,the results show they are in good agreement.The signification of the model is to design an optimal readout circuits (ROIC) for nanostructure photodetector.In order to explore its higher sensitive application, A ROIC of the CTIA and correlated double sample(CDS) structure is designed to decrease noise such as dark current of the quantum dots-in well hybrid structure and thus enable the photodetector to operate at high sensitivity.A 632.8nm laser beam with radiation intensity tunable which is calibrated by a Newport power meter shoots on the photodetector at 77K which is placed in shield black-box.The measured results show that the response voltage exceeds 30mV and 1.5E+08V/W responsivity under laser radiation intensity200pW at 77K and 30μs integration time when device voltage up to-3V.