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介绍了用MBE法生长SiGe／Si新材料的无氧外延表面等关键技术，并据此外延生长出本征和掺杂Si1-xGex／Si材料。其测试结果与分析表明，该合金材料有效组成成分（x=0.15）和电学参数符合理论设计目标。利用该材料试制成功了St1-xGex-PMOS（X=0.18）器件。
The key technologies of MBE, such as anaerobic epitaxial growth of new SiGe / Si materials, are introduced, and the intrinsic and doped Si1-xGex / Si materials are epitaxially grown. The test results and analysis show that the effective composition of the alloy material (x = 0.15) and the electrical parameters in line with the theoretical design goals. The material was used to successfully prototype St1-xGex-PMOS (X = 0.18) devices.