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本文报道使用DT—1型电子束退火机对注砷单晶硅进行扫描电子束退火的实验研究。试验了电子束退火各种条件对结果的影响,以便选择较适宜的退火条件。用背散射法和微分电导法分别测得了未退火和经退火样品的杂质浓度分布和载流子浓度分布,显示出电子束退火的杂质再分布状况,并计算出注入砷的电激活率。此外,还进行了范德堡法霍耳效应测量,得到注入层的平均载流子浓度、平均迁移率和薄层载流子浓度。电子束退火样品与热退火样品作了比较。
This paper reports the experimental study on the scanning electron beam annealing of as-injection a-Si using DT-1 electron beam annealer. The effects of various conditions of electron beam annealing on the results were tested in order to select more suitable annealing conditions. The impurity concentration distribution and carrier concentration distribution of unannealed and annealed samples were measured by backscattering method and differential conductance method, respectively. The redistribution of impurities in electron beam anneal and the electrical activation of arsenic were calculated. In addition, a Vanderbilt Fahrenheit effect was also performed to obtain the average carrier concentration, the average mobility and the thin-layer carrier concentration of the implanted layer. Electron beam annealed samples were compared with the thermally annealed samples.