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利用Krnig-Penney模型和形变势理论,从理论上探讨了纤锌矿型AlN/InN和AlN/GaN超晶格系统的能带结构及不同应变模式对能带结构的影响,计算得到了能带结构随各亚层参量变化的一般性规律、超晶格的能量色散关系、应变造成的影响以及不同亚层厚度的系统禁带宽度和导带第一子禁带宽度.研究发现,通过改变亚层厚度可以从不同形式设计能带结构,应变会改变系统禁带宽度,使带阶和子能带明显窄化,价带结构趋于复杂甚至生成准能带结构.与实验结果对比后发现,该模型适于模拟窄势阱结构超晶格,而对于宽势阱则必须考虑内建电场的作用.
Using the Krnig-Penney model and the deformation potential theory, the band structure and the effect of different strain modes on the band structure of the wurtzite AlN / InN and AlN / GaN superlattice systems are discussed theoretically. The general law of band structure changes with the parameters of each sublayer, the energy dispersion relationship of superlattice, the influence of strain and the system forbidden band width and the first forbidden band width of different sublayer thickness.The study found that by means of Changing the thickness of the sublayer can design the band structure from different forms, and the strain changes the forbidden band width of the system, narrowing the bands and sub-bands obviously, and the valence band structure becoming complicated or even generating the quasi-band structure.Compared with the experimental results, , This model is suitable for simulating a super-lattice of narrow-well structures, whereas for a wide potential well the built-in electric field must be considered.