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研制了在SOI衬底上工作于近红外波段的垂直入射GePIN光电探测器。采用低温Ge缓冲层技术,在超高真空化学气相淀积系统(UHV/CVD)上生长探测器材料。测试表明,器件的暗电流主要来源于表面漏电流,暗电流密度随着尺寸的增加而减小,在2V偏压时暗电流密度可达17.2mA/cm2;器件在波长1.31μm处的响应度高达0.22A/W,对应量子效率为20.8%。无偏压时,器件的响应光谱在1.2～1.6μm波长范围内观察到4个共振增强峰,分别位于1.25、1.35、1.45和1.55μm左右,峰值半高宽约为50nm,共振增强效应是由SOI衬底的高反射率引起的。采用传输矩阵法模拟的响应光谱与实验测量结果吻合良好。
Developed a vertical incident GePIN photodetector operating on the SOI substrate in the near infrared band. The low temperature Ge buffer layer technology is used to grow the detector material on a UHV chemical vapor deposition system (UHV / CVD). The test shows that the dark current of the device mainly comes from the surface leakage current, and the dark current density decreases with the increase of the size. The dark current density can reach 17.2mA / cm2 at the bias voltage of 2V. The responsivity of the device at the wavelength of 1.31μm Up to 0.22A / W, the corresponding quantum efficiency of 20.8%. The response spectrum of the device shows four resonant enhancement peaks in the wavelength range of 1.2 ~ 1.6μm at 1.25, 1.35, 1.45 and 1.55μm, respectively, and the peak full width at half maximum is about 50nm. The enhancement effect of the resonance is determined by SOI substrate caused by high reflectivity. The response spectrum simulated by transmission matrix method is in good agreement with the experimental results.