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采用电子束蒸发法沉积LaNi/Mg多层膜,再于350℃真空退火合金化的方法制备了厚度为375nm的LaMg2Ni合金薄膜.在吸、放氢过程中,该合金薄膜能够在高反射的金属态和透明的半导体态之间可逆地转变.在可见光波长范围内的平均透射率和电阻率在反射态和透明态之间的对比度大于104.利用扫描电子显微镜和原子力显微镜观察了吸放氢前后薄膜的表面及剖面形貌.结果表明,在氢化过程中薄膜表面的平整性降低且不可恢复,是脱氢态中出现低反射现象的主要原因.
LaNg / Mg multilayer films were deposited by electron beam evaporation and then annealed at 350 ℃ for 30min.The LaMg2Ni thin films with a thickness of 375nm were prepared by vacuum electron alloying at 350 ℃, State and transparent semiconductor states reversibly change between the visible wavelength range of the average transmittance and resistivity of the contrast between the reflective state and the transparent state is greater than 104. Scanning electron microscopy and atomic force microscope was used to observe the absorption and discharge before and after hydrogen The results show that the flatness of the surface of the film decreases and can not be recovered during hydrogenation, which is the main reason for the low reflection in the dehydrogenation state.