论文部分内容阅读
本文论证了一种完全单片的缓冲存贮器,它的运转受声表面波和集成多路转换场效应晶体管阵列之间的相互作用的控制。此器件以ZnO/Si声表面波工艺为基础,而场效应晶体管(FET)阵列则用标准的阴性金属-氧化物-半导体工艺制作。实验结果显示了预先存贮在器件中的射频调制波形(f_o≈100MHz)的低速读出。
This article demonstrates a fully monolithic buffer memory whose operation is governed by the interaction between surface acoustic waves and an integrated MUX transistor array. The device is based on the ZnO / Si surface acoustic wave technology, while the field effect transistor (FET) arrays are fabricated using standard negative metal-oxide-semiconductor processes. The experimental results show the low-speed readout of a radio frequency modulation waveform (f_o≈100 MHz) stored in advance in the device.