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本文详细研究了采用Cl_2/H_2刻蚀气体时,ICP刻蚀系统对InP/InGaAsP材料表面损伤的影响。通过设计特殊结构的InP/InGaAsP多量子阱结构,测量刻蚀区域及非刻蚀区域的光荧光强度的变化,并结合高斯深度分布模型对刻蚀损伤进行定量研究。详细研究ICP刻蚀系统中的压强、ICP功率、RF功率以及Cl_2/H_2刻蚀气体组分对损伤程度的影响。基于这些结果优化得到一组低损伤参数,最终实现刻蚀损伤深度小于16nm。
This paper studies in detail the effect of ICP etching system on the surface damage of InP / InGaAsP materials when using Cl_2 / H_2 etching gas. By designing the InP / InGaAsP multiple quantum well structure with special structure, the change of the fluorescence intensity of the light in the etched and non-etched areas was measured, and the damage of the etched layer was quantitatively studied with Gaussian depth distribution model. The effects of ICP gas pressure, ICP power, RF power and Cl 2 / H 2 etchant gas composition on the degree of damage were investigated in detail. Based on these results, a set of low damage parameters are optimized, and finally the depth of the damage is less than 16 nm.