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以弛豫时间近似给出了极性光学声子、压电声学声子、畸变势声学声子、离化杂质、和中性杂质散射的组合,其结果与高纯G_aA_s电子迁移率与温度和浓度的依赖关系很一致。对于极性光学声子散射来说弛豫时间在每一温度下由伊伦赖希变分计算所确定。因为大多数参数是已知的,计算中唯一可调整的参数是导带畸变势,其值与实验给出的|E_1|=7.0电子伏完全一致。利用该值得到240,000厘米~2/伏·秒的77°K晶格散射限制的迁移率。
A combination of polar optical phonon, piezoelectric phonon, distorted potential acoustic phonon, ionized impurity and neutral impurity scattering is given by the relaxation time approximation. The results are in agreement with the experimental data of the electron mobility of high-purity G_aA_s and temperature and The concentration dependence is very consistent. For polar optical phonon scattering, the relaxation time is determined by the Ilunn Laiki variational calculation at each temperature. Since most of the parameters are known, the only parameter that can be adjusted in the calculation is the conduction band distortion potential, which is exactly the same as the experimentally given | E_1 | = 7.0 electron volts. Using this value a mobility of 77 ° K lattice-scattering-limited mobility of 240,000 cm -2 / V · sec was obtained.