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报道了一种高增益高效率 S波段硅脉冲功率晶体管的研制结果。该器件在 f=2 .4～ 2 .6GHz,D=1 0 % ,τp=1 0 0 μs,Vc=36V条件下输出功率 1 0 0 W、增益 9d B、效率 50 %。在 f=2 .6GHz短脉宽条件下输出功率 1 60 W、增益 8.0 d B、效率 60 %。
A high-gain and high-efficiency S-band silicon pulse power transistor is reported. The output power of the device is 100W at f = 2.4-6.6GHz, D = 10%, τp = 100μs and Vc = 36V, and the gain is 9dB. The efficiency is 50%. Under the condition of f = 2.6GHz short pulse width, the output power is 160 W, the gain is 8.0 d B and the efficiency is 60%.