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本文介绍分子束外延生长HgCdTe外延层以及利用平面工艺技术制造敏感波长为8μm-10μm的小型p-n结的结果。在分子束外延过程中,生长动态、组分和表面粗糙度是利用内在的高能电子衍射计和椭圆对称计在原位控制的。 小面积光敏二极管(50×70μm)是利用平面工艺技术和阳极氧化物薄膜下的退火技术而制造出来的。V-Ⅰ、光谱响应以及噪声特性的测量结果表明,在用分子束外延技术生长的碲镉汞外延层上制造的光电二极管具有可以接受的参数,用这种器件可以制造一维和二维光电二极管列阵。
This paper presents the results of molecular beam epitaxial growth of HgCdTe epitaxial layers and the fabrication of small p-n junctions with sensitive wavelengths of 8μm-10μm by planar fabrication techniques. During molecular beam epitaxy, the growth dynamics, composition and surface roughness are controlled in situ using intrinsic high-energy electron diffraction and ellipsometry. Small area photodiodes (50 × 70μm) are fabricated using planar technology and annealing techniques under anodic oxide films. Measurements of V-I, spectral response, and noise characteristics show that photodiodes fabricated on MBC epitaxial layers grown by molecular beam epitaxy have acceptable parameters with which one-dimensional and two-dimensional photodiodes can be fabricated Array.