据《O Plus E》1992年第147期报道,日本新技术事业团已开发高纯度、低晶格缺陷的GaAs单晶制造技术,即用蒸气控制法制作GaAs单晶的技术。这种单晶材料能提高发光二极管、半导体激光器、通信用LSI等GaAs半导体的性能。这是一种改进拉晶方法的单晶制造法。用砷蒸气充满密封容器,并控制蒸气压,防止容易蒸发的砷从单晶中逸出。若砷从单晶中逸出, According to “O Plus E” 1992, No. 147 reported that Japan's new technology group has developed high-purity, low lattice defect GaAs single crystal manufacturing technology, that is, GaAs single crystal vapor control method. This single crystal material can improve the performance of GaAs semiconductors such as light emitting diodes, semiconductor lasers and communication LSIs. This is a single crystal manufacturing method to improve the crystal pulling method. Fill the sealed container with arsenic vapor and control the vapor pressure to prevent easy evaporation of arsenic from the single crystal. If arsenic escapes from the single crystal,