半导体单层、多层外延材料的纵向浓度分布是一项非常重要的参数,它直接影响器件的性能。纵向浓度分布一般可用自动C-V法或二次谐波法测量。但受某些材料表面浓度及PN结耐压的影响,不能测得完整的纵向浓度分布。电化学C-V法弥补了上述不足,现已用于测量半导体单层、多层外延,PN结 Longitudinal concentration distribution of semiconductor single-layer, multi-layer epitaxial materials is a very important parameter, which directly affects the performance of the device. Vertical concentration distribution can generally be measured by automatic C-V method or second harmonic method. However, due to the surface concentration of some materials and the PN junction withstand voltage, the complete longitudinal concentration distribution can not be measured. Electrochemical C-V method to make up for the above shortcomings, is now used to measure semiconductor monolayer, multilayer epitaxy, PN junction