在n-型硅衬底上制作了由紧密相邻的MOS电容器组成的结构。当在一个电极的下面形成耗尽区时,少数载流子(空穴)可以存储在由此形成的势井中。然后,适当的控制电极电位,可将电荷传送到近邻的电极。电荷耦合器件的主要依据是假设电荷传输发生在一定的时间内而只有少量损失。本文主要从实验上加以验证。对于传输时间小于100毫微秒,观察到传输效率大于98%。 A structure consisting of closely adjacent MOS capacitors is fabricated on an n-type silicon substrate. When a depletion region is formed under one electrode, minority carriers (holes) may be stored in the well thus formed. Then, with proper control of the electrode potential, the charge can be transferred to the adjacent electrode. Charge-coupled devices are based on the assumption that the charge transfer takes place within a certain period of time with only a small loss. This paper mainly verified experimentally. For transmission times of less than 100 nanoseconds, a transmission efficiency of more than 98% was observed.