论文部分内容阅读
通过把Zn扩散到液相处延生长的GaP n—p—n结构上,制成了场致发光磷化镓p—n—p—n开关(dynistors)和可控整流器(闸流晶体管),这种器件能在0≤T≤500℃的温度范围内工作。发现磷化镓晶体闸流管的正向和反向闭锁电压分别高达280伏和80伏。这类晶体闸流管通过加上小于5安/厘米~2的门电流可开关到低胆态,并在正向电压2.2伏时,呈现维持电流密度约为15安/厘米~2。发现在室温下GaP开关(dynistors)正向闭锁电压高达380伏,而在415℃时则为310伏。当正向偏置到低阻态时,这类器件则成为高亮度发光体,室温下发射光谱在绿色光谱区域。
The electroluminescent phosphorescent p-n-p-n dynistors and thyristors (thyristors) were fabricated by diffusing Zn into a GaPn-p-n structure grown at the liquid phase. This kind of device can work in the temperature range of 0≤T≤500 ℃. Found gallium phosphide thyristor forward and reverse blocking voltage up to 280 volts and 80 volts. This type of thyristor switches to a low-ghosting state by adding a gate current of less than 5 A / cm 2 and maintains a current density of about 15 A / cm 2 at a forward voltage of 2.2 volts. GaP dynistors were found to latch up to 380 volts positive at room temperature and 310 volts at 415 ° C. When forward-biased to low-impedance state, these devices become high-brightness luminophores with emission spectra in the green spectral range at room temperature.