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采用等离子增强化学气相沉积 (PECVD)技术制备了一组氧含量不同的氢化非晶氧化硅 (a SiOx∶H)薄膜 ,室温下在 5 5 0～ 90 0nm的波长范围内观察到了两个强的发光带 :一个是由峰位在 6 70nm( 1 85eV)左右的主峰和峰位在 835nm( 1 46eV)的伴峰组成的包络 ,另一个只能在氮气氛中 1 1 70℃退火后的样品中观测到 ,峰位大约在 85 0nm .通过对红外谱和微区Raman谱的分析 ,认为这两个发光带可能分别与存在于薄膜中的a Si原子团和Si纳米晶粒有关 .
A series of films of hydrogenated amorphous silicon oxide (a SiOx:H) with different oxygen contents were prepared by plasma enhanced chemical vapor deposition (PECVD) technique. Two strong Emitting bands: one consists of an envelope consisting of a main peak at 670 nm (1 85 eV) and a companion peak at 835 nm (1 46 eV), and the other can only be annealed in a nitrogen atmosphere at 1170C In the sample, the peak position is about 85 0 nm.Analysis of infrared spectrum and Raman spectrum shows that the two luminescence bands may be related to the a Si clusters and Si nanocrystals present in the thin films, respectively.