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研究了在热丝化学气相生长金刚石的过程中、衬底温度、衬底表面附近的气体温度以及气流的 质量流密度分布对金刚石膜的形核和生长的影响，模拟计算结果表明，这三个参量是空间位置的函数，在 某些区域，这三个参量均匀分布。当热丝阵列面与衬底间距离超过７ｍｍ之后，这三个参量在衬底上有一 个较大的均匀区域，在该区域的两侧，各参量值显著变化，在衬底中心的均匀区域，金刚石膜晶形清楚而致 密；偏离该区域，这三个参量数值明显下降，形核密度和生长速度较低，三个参量值均匀的区域可作为金刚 石大面积均匀的形核和生长的位置。
The effects of the substrate temperature, the gas temperature near the substrate surface and the mass flow density distribution of air flow on the nucleation and growth of diamond films were investigated in the hot filament CVD. The simulation results show that the three The parameter is a function of the spatial position, and in some areas the three parameters are evenly distributed. When the distance between the heater wire array face and the substrate is more than 7 mm, the three parameters have a large uniform area on the substrate, and on both sides of the area, the values of the parameters vary significantly. In the uniform area in the center of the substrate , Diamond film crystal clear and dense; deviated from the region, the three parameters decreased significantly, the nucleation density and growth rate is low, the three uniform values of the region can be used as diamond uniform nucleation and growth area.