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通过对不同剂量γ辐照前后CCD的暗电流、转移效率、饱和输出电压等参数变化的分析,发现辐照后器件暗电流的增加主要是辐照后栅氧化层中产生的感生界面态电荷和场氧化层中产生大量的复合中心引起;转移效率下降主要是辐照后栅氧化层中产生的界面态俘获转移电荷所致;器件辐照后暗电流的增加将降低器件的有效信号输出幅度。
The changes of dark current, transfer efficiency and saturation output voltage of CCD before and after different doses of γ irradiation were analyzed. It was found that the increase of dark current of irradiated devices was mainly the induced interfacial charges And a large amount of recombination centers in the field oxide layer. The decrease of the transfer efficiency is mainly caused by the interfacial state trapped in the gate oxide layer after irradiation. The increase of the dark current after the device irradiation will reduce the effective signal output of the device .