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本文提出一种精密确定场发射尖端附近电位分布的新方法——逐次放大逼近模拟法。对一实际场发射系统,一方面实测了场发射电流;另一方面则用该法对系统的电位分布,进行了四次放大逼近模拟测量。并由此计算出尖端的电流密度分布、发射面积和发射总电流。将两电流进行比较,结果是一致的。表明:用这种方法精密确定尖端场分布,特别是测定不规则表面的场分布是方便有效的。
In this paper, we propose a new method to accurately determine the potential distribution near the field emission tip - successive amplification approximation simulation. For an actual field emission system, on the one hand, the field emission current is measured; on the other hand, the method is used to measure the potential distribution of the system by four times of amplification and approximation. And thus calculate the tip of the current density distribution, emission area and the total current emission. The two currents are compared, the result is consistent. It shows that it is convenient and effective to use this method to precisely determine the tip field distribution, especially the field distribution of irregular surface.