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使用直流等离子体化学气相沉积（DC－PCVD）装置，控制合适的工艺参数，可对置于其阴阳极上的试样沉积出以Si3N4为主要成份的薄膜。提出了这种薄膜的形成机理。
Using dc-plasma CVD (DC-PCVD) devices to control the appropriate process parameters, a thin film of Si3N4 as the main component can be deposited on the sample placed on its cathode and anode. The formation mechanism of this film is proposed.