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介绍了采用ＭＯＣＶＤ或ＨＶＰＥ技术高质量异质外延生长ＧａＮ薄膜的发展状况。分析和比较了以不同材料为衬底或过渡层生长ＧａＮ的工艺过程和薄膜质量，对生长动力学机理也作了简要介绍。
The development of high quality heteroepitaxial growth GaN films by MOCVD or HVPE is introduced. The process and film quality of GaN grown from different materials as substrate or transition layer were analyzed and compared. The growth kinetics mechanism was also briefly introduced.