论文部分内容阅读
在７７Ｋ流体静压和低激发功率密度两种不同实验条件下，对组分ｘ＝０．８８混晶材料ＧａＡｓ＿（１－ｘ）Ｐ＿ｘ：Ｎ的光致发光进行了研究。在发光谱中分别明显地出现ＮＮ＿ｉ（ｉ＝１，３）对束缚激子的发光峰。观察到压力下Ｎ＿ｘ带发光猝灭及谱带窄化。低温下，降低激发功率密度，Ｎ＿ｘ谱带移向低能量位置并且半宽变窄。实验结果表明发生Ｎ＿ｘ束缚激子从孤立Ｎ＿ｘ中心到ＮＮ＿ｉ中心的热激活转移。分析结果说明，在加压和低激发密度下，发生这种转移现象的主导机制分别是多重陷入和变程跳跃．
The photoluminescence (PL) of GaAs_ (1-x) P_x: N with x = 0.88mixture was studied under different experimental conditions of 77K hydrostatic pressure and low excitation power density. The luminescence peaks of bound exciton with NN_i (i = 1, 3) obviously appear in the luminescence spectrum. N_x band luminescence quenching and band narrowing were observed under pressure. At low temperatures, the excitation power density is reduced, the Nx band moves to a lower energy position and the half-width narrows. The experimental results show that the heat-activated transfer of N_x bound excitons occurs from isolated N_x center to NN_i center. The analysis results show that under the pressure and low excitation density, the dominant mechanism of this shift phenomenon are multiple traps and jumps.