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提出了一种基于ＰＳＰＩＣＥ４．０２通用电路模拟程序与优化技术相结合提取ＧａＡｓＭＥＳ－ＦＥＴ模型参数的方法．根据实测的ＧａＡｓＭＥＳＦＥＴ小信号Ｓ参数与大信号Ｓ参数，利用约束优化技术提取模型等效电路元件参数，并利用该电路模型参数设计制作了３．７ＧＨｚ～４．２ＧＨｚ和５．２ＧＨｚ～５．８ＧＨｚＧａＡｓＭＥＳＦＥＴ放大器，给出设计和测试结果并验证了该方法的正确性
A method of extracting GaAsMES-FET model parameters based on PSPICE4.02 general circuit simulation program and optimization technique is proposed. According to the measured GaAsMESFET small-signal S-parameters and large-signal S-parameters, the equivalent circuit components parameters of the model were extracted by using the constraint optimization technique. The 3.7GHz ~ 4.2GHz and 5.2GHz ~ 5.8GHz GaAsMESFETs Amplifier, gives the design and test results and verifies the correctness of the method