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Cu(In,Ga)Se2(CIGS)thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment.The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy(SEM).The orientation of CIGS thin films is identified by X-ray diffraction(XRD)and Raman spectrum,respectively.Through analyzing the film-forming mechanisms of two preparation processes,we consider the cause of such differences is that the films deposited by three-stage process at low temperature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones.The three-stage process at low temperature results in the CIGS thin films with the(220)/(204)preferred orientation,and the ordered vacancy compound(OVC)layer is formed on the surface of the film.This study has great significance to large-scale industrial production.
Cu (In, Ga) Se2 (CIGS) thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment. These quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy (SEM). The orientation of CIGS thin films is identified by X-ray diffraction (XRD) and Raman spectrum, respectively. Looking up the film-forming mechanisms of two preparation processes, we consider the cause of such differences is that the films deposited by three-stage process at low temperature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones. The three-stage process at low temperature results in the CIGS thin films with the (220) / (204) preferred orientation, and the ordered vacancy compound (OVC) layer is formed on the surface of the film. This study has great significance to large-scale industrial production.