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本文提出一种新的用于 CMOS图像传感器像素的光电检测器——双极结型光栅晶体管。由于引入 p+ n注入结 ,光电荷的读出速率大大增加 ,改善了 CMOS图像传感器的工作速率和响应灵敏度。尽管传统的光电集成电路的电路级模拟采用微电子集成电路的模拟方法 ,但是光电子集成电路不仅含有微电子器件和电信号还含有光电检测器和光信号 ,采用传统的集成电路模拟方法有其局限性。本文提出一种行为级模拟方法 (光电子检测器设计的新方法 ,利用 C、MATL AB和 HSPICE等语言写出光电子器件的模拟器 )来模拟分析双极结型光栅晶体管的特性。基于0 .6 μm CMOS工艺的分析结果表明双极结型光栅晶体管在不同栅氧化层厚度随栅压变化与传统光栅晶体管的特性一样 ,但光电流密度呈指数式增长且光电流密度增大 ,因此改善了 CMOS图像传感器的工作速率和响应灵敏度
This paper presents a new photodetector for CMOS image sensor pixels - bipolar junction grating transistors. Due to the introduction of p + n injection junction, the read rate of photocharges greatly increases, improving the CMOS image sensor operating speed and response sensitivity. Although circuit simulation at the level of optoelectronic integrated circuits uses analog methods of microelectronic integrated circuits, optoelectronic integrated circuits contain not only microelectronic devices and electrical signals but also photodetectors and optical signals. There are limitations to using traditional integrated circuit simulation methods . This paper presents a behavioral simulation method (a new approach to the design of optoelectronic detectors that uses optics such as C, MATL AB and HSPICE to write simulators for optoelectronic devices) to simulate and analyze the characteristics of bipolar junction-type grating transistors. Based on the 0.6 μm CMOS process, the results show that the bipolar junction-type gratings have the same gate-oxide thickness variation with gate voltage as the conventional gate transistors. However, the photocurrent density increases exponentially and the photocurrent density increases. Thus improving the CMOS image sensor operating speed and response sensitivity