We investigate the photoluminescence (PL) emission from InGaN/GaN multiple quantum-well structures before and after 1 Me V electron irradiation.The PL peak intensity exhibits a slight enhancement after low-dose electron irradiation (2×1013 e/cm2),and then decreases with the cumulative electron dose.Meanwhile,the full width at half maximum of the PL spectrum narrows after low-dose electron irradiation and widens when the irradiation dose is relatively high.With respect to the yellow photoluminescence,there is no significant change until the electron fluence has accumulated up to 1014 e/cm2.