论文部分内容阅读
采用超声喷雾热分解法,在Eagle 2000衬底上制备ZnO薄膜。通过Hall测试、X射线衍射、扫描电子显微镜和透过率测试研究不同In掺量对ZnO薄膜电学、结构、表面形貌和光学特性的影响。结果表明:当In摩尔掺量(In与ZnO的摩尔比)为1.5%时,获得的薄膜具有较低的电阻率(2.48×10-3 cm);所有In掺杂ZnO薄膜的透过率均达到80%;将ZnO:In薄膜作为前电极应用于μc-Si:H薄膜太阳电池,可以获得5.01%的转换效率。
ZnO thin films were prepared on an Eagle 2000 substrate by ultrasonic spray pyrolysis. The effects of different In contents on the electrical, structural, surface morphology and optical properties of ZnO thin films were investigated by Hall test, X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The results show that the obtained films have lower resistivity (2.48 × 10-3 cm) when the In molar content (In / ZnO molar ratio) is 1.5%. The transmittance of all In-doped ZnO thin films Reaching 80%. Using ZnO: In thin film as the front electrode in the μc-Si: H thin film solar cell, the conversion efficiency of 5.01% can be obtained.