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从协调快速晶闸管主要参数之间矛盾关系、降低功率损耗以及并联均流应用等方面,论述了改善快速晶闸管通态特性的重要意义。在影响晶闸管通态压降的主要因素中,着重分析了提高晶闸管j3结的注入比降低通态压降的机理。为获得比较理想的杂质浓度分布,增大j3结两侧杂质浓度的比值,在快速晶闸管的制造中,p型扩散工艺采用了固态源闭管式镓铝双质掺杂技术。研究结果表明:采用该技术制造的快速晶闸管,通态基本特性参数具有较好的一致性,通态压降明显降低,通态特性明显改善,关断时间与通态压降的关系也得到了合理的协调,提高了器件的综合电气性能。
The importance of improving on-state characteristics of fast thyristor is discussed from the aspects of coordinating the contradiction between the main parameters of the fast thyristor, reducing the power loss and the application of shunt current in parallel. Among the main factors affecting the on-state voltage drop of thyristor, the mechanism of increasing the injection ratio of thyristor j3 junction and reducing the on-state voltage drop is emphatically analyzed. In order to obtain a more ideal impurity concentration distribution and increase the ratio of impurity concentration on both sides of j3 junction, the p-type diffusion process uses a solid-state source-closed-type gallium aluminum double-doping technique in the manufacture of a fast thyristor. The results show that the fast thyristor fabricated by this technique has good consistency with the basic on-state parameters, the on-state voltage drop is obviously reduced and the on-state characteristic is obviously improved. The relation between off-time and on-state voltage drop is also obtained Reasonable coordination and improve the overall electrical performance of the device.