论文部分内容阅读
通过参数调整和工艺简化 ,制备了应变Si沟道的SiGeNMOS晶体管 .该器件利用弛豫SiGe缓冲层上的应变Si层作为导电沟道 ,相比于体Si器件在 1V栅压下电子迁移率最大可提高 48 5 % .
By adjusting the parameters and simplifying the process, a strained Si-channel SiGeNMOS transistor is prepared, which uses a strained Si layer on a relaxed SiGe buffer layer as a conductive channel and has the largest electron mobility at a gate voltage of 1V compared to a bulk Si device Can increase 48 5%.