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对氧化限制型外腔式光子晶体垂直腔面发射激光器注入到有源区的电流密度分布进行了分析研究.提出三维电流分布计算模型,研究了光子晶体结构对电流密度分布和器件串联电阻的影响.研究发现,光子晶体孔刻蚀深度越深,电流分布圆对称性越差,引起的串联电阻越大.不同光子晶体图案对电流分布的均匀性和圆对称性也有很大的影响.该模型对于研究、设计氧化限制型外腔式光子晶体垂直腔面发射激光器提供了一个有用的分析方法.
The current density distribution in the active region of the oxidized confinement external cavity photonic crystal vertical cavity surface emitting laser is analyzed and studied.The calculation model of the three-dimensional current distribution is proposed and the influence of the photonic crystal structure on the current density distribution and the device series resistance It is found that the deeper the depth of photonic crystal hole etching, the worse the circular symmetry of the current distribution, the larger the series resistance, and the different photonic crystal patterns have a great influence on the uniformity and circular symmetry of the current distribution. A useful analytical method is provided for the study and design of the oxidized confinement external cavity photonic crystal vertical-cavity surface-emitting lasers.