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利用自行研制的光谱响应测试仪对国产三代微光管进行了光谱响应测试,给出了三代微光管的光谱响应特性,利用曲线拟合方法估算了GaAs光电阴极材料的性能参数。结果显示该三代微光管的积分灵敏度约800μA/lm左右,所选GaAs材料的电子扩散长度为2.0μm,与1.6μm的阴极厚度相当,电子表面逸出几率为0.38,后界面复合速率为106cm/s。发现GaAs材料的扩散长度偏低,以及阴极的后界面复合速率太大是限制三代微光管光电发射性能进一步提高的重要原因。
The spectral responsivity of domestic three-stage microcolumn was tested by the self-developed spectral response tester. The spectral response characteristics of three generations of microcolumn were obtained. The performance parameters of GaAs photocathode were estimated by curve fitting method. The results show that the integration sensitivity of the three generations of micro-light tube is about 800μA / lm. The selected GaAs material has an electron diffusion length of 2.0μm, which is equivalent to the cathode thickness of 1.6μm, the electron surface escape probability is 0.38 and the interface recombination rate is 106cm / s. It is found that the diffusion length of GaAs material is low and the recombination rate of cathode and back interface is too large, which is one of the important reasons for limiting the further improvement of the photoemission performance of the third-generation light-emitting diodes.