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利用微波电子回旋共振等离子体增强非平衡磁控溅射法在不同N2流量下制备无氢SiNx薄膜.通过X光电子能谱、纳米硬度仪等表征技术,研究了不同N2流量下制备的SiNx薄膜的化学键结构、化学键含量、元素配比及各元素沿深度分布.研究结果表明,N2流量是影响SiNx薄膜化学键结构、元素配比、元素延深度分布等性质的主要因素.在N2流量为1sccm的条件下制备的SiNx薄膜呈富Si态;在N2流量为2sccm的条件下制备的SiNx薄膜中Si—N键含量最高,可达到94.8%,化学吸附主要发生在薄膜表面,同时薄膜具有较好的机械性能,硬度值可达到22.9GPa;在N2流量为20sccm条件下制备的SiNx薄膜,薄膜表面含有46.8%的N—Si—O键及18.6%的Si—O键结构,薄膜内部含有36.8%的N—Si—O键及12.5%的Si—O键结构,表明薄膜结构疏松,在空气中易被氧化,化学吸附在薄膜表面及内部同时发生,因此薄膜具有较差的机械性能,硬度值仅为12GPa.
Hydrogen-free SiNx thin films were prepared by microwave electron cyclotron resonance plasma enhanced unbalanced magnetron sputtering at different N2 flow rates.The properties of SiNx thin films prepared under different N2 flow rates were studied by X-ray photoelectron spectroscopy, nanohardness and other characterization techniques Chemical bond structure, chemical bond content, elemental ratio and distribution of each element along the depth.The results show that the N2 flow rate is the main factor affecting the chemical bond structure, elemental ratio and elemental depth distribution of SiNx thin films.When N2 flow rate is 1sccm SiNx films prepared under the condition of Si-rich state; N2 flow rate of 2sccm SiNx films prepared under the conditions of the highest content of Si-N can reach 94.8%, chemical adsorption occurs mainly in the film surface, while the film has better mechanical Performance and hardness can reach 22.9GPa; the SiNx film prepared under N2 flow rate of 20sccm, the film surface contains 46.8% N-Si-O bond and 18.6% Si-O bond structure, the film contains 36.8% N -Si-O bond and 12.5% Si-O bond structure, indicating that the film structure loose, easily oxidized in the air, chemical adsorption in the film surface and internal simultaneously, so the film has poor mechanical properties, Value is only 12GPa.