器件尺寸按比例缩小是实现超大规模集成电路的有效途径，但寄生和二级效应却将器件尺寸限在一定的水平。本文在对比分析常温与低温下小尺寸器件效应的基础上，重点研究了ＭＯＳ器件亚阈特性对器件性能及按比例缩小的影响，并根据低温工作的特点，提出了ＭＯＳ器件一种低温按比例缩小规则，该原则对低温器件的优化设计，从而更大程度地提高电路与系统性能具有重要的指导意义。 Scaling down the device size is an effective way to achieve very large scale integrated circuits, but parasitic and secondary effects limit the size of the device to a certain level. Based on the comparative analysis of the effect of small size device at room temperature and low temperature, this paper focuses on the subthreshold characteristics of MOS devices and the effect of scaling down. According to the characteristics of low temperature operation, Reduce the rules, the principle of optimal design of low-temperature devices, thus to a greater extent improve the circuit and system performance has important guiding significance.