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作者利用低温氧等离子体处理聚硅烷涂层 ,成功地制备了SiO2 膜 由IR谱给出的Si-O键的吸收峰波数 ,随氧等离子体处理时间的不同在 10 65～ 10 88cm- 1范围变化 ;XPS谱给出Si2 p的结合能为 10 3.3～ 10 3.5eV ,硅氧原子比为 1∶1 99;激光椭园偏振仪测得折射率在 1.30～ 1.55范围 ;MOS电容的高频C V特性曲线表明 ,平带电压为正 ,计算得氧化物电荷的电性为负 ,密度为 6.6× 10 10 ～ 8.8× 10 11cm- 2 ,其大小可以通过改变处理条件进行控制 ;BT实验表明 ,可动电荷密度为 ( 3～ 6)× 10 10 cm- 2 ,这种新型的SiO2 膜可望在微电子器工艺中得到应用
The authors successfully prepared the Si-O absorption peak wavenumbers of SiO2 films by IR spectroscopy using low-temperature oxygen plasma treatment of polysilane coating. The wavenumber of Si-O bond in the range of 10 65 ~ 10 88 cm -1 with oxygen plasma treatment time XPS spectra showed that the binding energies of Si2p were 10 3.3 ~ 10 3.5eV and the atomic ratio of silicon to oxygen was 1: 99; the refractive index measured by laser ellipsometer was in the range of 1.30-1.55; the high frequency CV The characteristic curve shows that the flat band voltage is positive, and the calculated electrical charge of the oxide is negative, with a density of 6.6 × 10 10 -8.8 × 10 11 cm -2. The size can be controlled by changing the processing conditions. The BT experiment shows that the Dynamic charge density of (3 ~ 6) × 10 10 cm-2, this new type of SiO2 film is expected to be applied in microelectronics process