采用金属有机热分解法制备了Pb过量的PLT铁电薄膜电子探针和Auger电子能谱分析证实了在薄膜中及薄膜与底电极界面上存在过量Pb引起成份偏析，导致缺陷能级上的陷阱电荷。在退极化场的作用下，陷阱电荷可聚集在畴壁钉扎电畴，造成电滞回线和C—V曲线异常 The PLT ferroelectric thin film electron probe with excess Pb and the Auger electron spectroscopy prepared by the metal-organic thermal decomposition method confirmed the existence of excessive Pb in the film and the interface between the film and the bottom electrode to cause segregation of components, resulting in traps on the defect level Charge. In the role of the depolarization field, the trap charge can accumulate in the domain wall pinning domain, resulting in abnormal hysteresis loop and C-V curve