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For the Mn-substituted CdTe semiconductors, the anomaly of the concentration-independent optical absorption edge at about 2.0-2.3eV is studied by using the method of linear combinations of atomic orbits. Results show-that at the optical absorption edge, the p-d excitations may occur at higher Mn concentration and that the pressure behavior has the negative effect having the similarity as that of Mn intra-d excitations. The physical reasons of the negative pressure effect of the p-d transition are discussed and the numerical calculated result of the pressure coefficient for Cd0.5Mn0.5 Te is in excellent agreement with the experimental data.
For the Mn-substituted CdTe semiconductors, the anomaly of the concentration-independent optical absorption edge at about 2.0-2.3eV is studied by using the method of linear combinations of atomic orbits. Results show-that at the optical absorption edge, the pd excitations may occur at higher Mn concentration and that the pressure behavior has the negative effect having the similarity as that of Mn intra-d excitations. The physical reasons of the negative pressure effect of the pd transition are discussed and the numerical calculated result of the pressure coefficient for Cd0.5Mn0.5 Te is in excellent agreement with the experimental data.