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研究了具有不同温度和不同化学势的两个热库中电子通过一个双势垒InAs/InP纳米线异质结进行的传输.利用传输矩阵法得到了电子的传输概率,进而计算得到电子传输所产生的热流.通过数值计算给出了热电子制冷机的性能特征曲线.进一步分析了势垒宽度和势阱宽度对制冷机工作性能的影响.研究发现,当势阱宽度一定时,随着势垒宽度变大共振中心能级的位置变大,共振能级宽度变小,同一偏压对应的制冷率变小,相对制冷系数变大.当势垒宽度一定时,随着势阱宽度变大,同一偏压对应的相对制冷系数变小.当势垒和势阱宽度同时变化时,得到的曲线与势垒宽度一定势阱宽度变化时得到的曲线基本相似.这表明制冷率和相对制冷系数主要受势阱宽度变化的影响.
The transport of electrons in two thermal reservoirs with different temperatures and different chemical potentials through a double-barrier InAs / InP nanowire heterojunction was investigated. The transfer probability of the electrons was obtained by the transfer matrix method, and the electron transport The numerical simulation shows the characteristic curves of the thermoelectric refrigerator, and further analyzes the effect of the barrier width and the potential width on the performance of the refrigerator.It is found that when the potential well width is constant, The larger the barrier width becomes, the larger the resonance center energy level becomes and the smaller the resonance energy level width becomes. The cooling rate corresponding to the same bias becomes smaller and the relative cooling coefficient becomes larger. When the barrier width is constant, as the potential well width becomes larger , The relative cooling coefficient corresponding to the same bias becomes smaller.When the barrier and potential well width change at the same time, the obtained curve is basically similar to the curve obtained when the potential width of the barrier width changes by a certain well width, which shows that the cooling rate and the relative refrigeration coefficient Mainly affected by changes in the width of the potential well.