提出了一种基于北京大学硅玻璃键合深刻蚀释放工艺的扩展工艺 ,用来加工微型隧道加速度计 .采用HP4 14 5 B半导体分析仪在大气环境下对所加工的器件进行了开环测试 ,验证了隧道电流的存在以及隧道间隙与隧道电流之间的指数关系 .实验结果外推出的隧道势垒的范围为 1.182～ 2 .177e V.大部分器件的开启电压在 14～16 V之间 .在 - 1,0和 +1g三种状态下对开启电压分别进行了测试 ,得到加速度计的灵敏度约为 87m V/g. An extended process based on silicon-glass deep etching release process was proposed for the processing of micro-tunnel accelerometers. The HP4145B semiconductor analyzer was used to conduct open-loop testing of the fabricated devices under atmospheric conditions. The exponential relationship between the tunneling current and the tunneling current is verified.The experimental results extrapolate the tunneling barrier in the range of 1.182 ~ 2.177e V. Most devices have a turn-on voltage of 14 ~ 16V. The turn-on voltages were tested under-1, 0 and + 1g respectively. The sensitivity of the accelerometer was about 87mV / g.