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采用射频共溅射复合靶(Si+Ge+石墨C)技术制备Si1-x-yGexCy三元合金薄膜.Si,Ge和C的含量用其靶的相对面积来表示,对样品的后退火处理是在N2气保护下恒温30min后自然降温到室温.通过IR,Raman和XPS的测量结果表明,所制备的薄膜中含有Si,Ge,C3种元素,有较明显的Si-C,Si-Ge,Ge-C键合.通过电阻率—温度谱ρ-T的测量研究薄膜的电学性能,测量了不同C含量和不同温度退火后薄膜ρ-T关系的变化,发现随C含量的增加电阻率增大,激活能也增大;450℃退火后电阻率普遍变小,激活能也变小,对这一规律性的结果作了解释
Si1-x-yGexCy ternary alloy films were prepared by radio frequency co-sputtering target (Si + Ge + graphite C). The contents of Si, Ge and C were expressed in terms of the relative areas of their targets. The results of IR, Raman and XPS show that the prepared thin films contain Si, Ge and C3 elements with obvious Si-C, Si-Ge, Ge -C bonding.The electrical properties of the films were investigated by measurement of the resistivity-temperature profile ρ-T, and the changes of the ρ-T of the films after annealing at different C contents and different temperatures were measured. It was found that the resistivity increased with increasing C content , The activation energy also increased; after 450 ℃ annealing resistivity generally smaller, the activation energy also becomes smaller, the results of this regular explanation